onsemi MMBT2222ALT1G
$ 0.036
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | MMBT2222ALT1G | 3.138.000 | 3K | Tape & Reel | ||||||||
| Avnet | MMBT2222ALT1G | 918.000 | 3K | 1d | ||||||||
| Newark | MMBT2222ALT1G | 32.842 | 1 | Cut Tape | ||||||||
| Arrow Electronics | MMBT2222ALT1G | 1548 | 1 | |||||||||
| Verical | MMBT2222ALT1G | 312.000 | 6K |
Cronologia dell'inventario
Tendenza a 3 mesi: +3.87%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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1 parte disponibile
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Questo componente
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Price @ 1000
$ 0.036
$ 0.035
$ 0.035
Stock
120,040,767
2,417,224
2,417,224
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-23
SOT-23
SOT-23
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
30 V
30 V
Max Collector Current
600 mA
600 mA
600 mA
Transition Frequency
300 MHz
250 MHz
250 MHz
Collector Emitter Saturation Voltage
300 mV
1.6 V
1.6 V
hFE Min
75
75
75
Power Dissipation
225 mW
225 mW
225 mW
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
Diodes Inc.MMBT4401-7-F
Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 310 mW, SOT-23, Surface Mount
Diodes Inc.MMBT4401-13-F
Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 350 mW, SOT-23, Surface Mount
Diodes Inc.BC817-40Q-13-F
TRANS NPN 45V 0.5A SOT23-3 / Bipolar (BJT) Transistor NPN 45 V 500 mA 100MHz 310 mW Surface Mount SOT-23-3
Descrizioni
Descrizioni di onsemi MMBT2222ALT1G fornite dai suoi distributori.
Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 225mW Surface Mount SOT-23-3 Tape & Reel
TRANSISTOR, BIPOLAR, SI, NPN, GENERAL PURPOSE, VCEO 40VDC, IC 600MA, PD 225MW, SOT-23
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 600 mA, 225 mW, SOT-23, Surface Mount
Bipolar Transistors (BJT); MMBT2222ALT1G; ON SEMICONDUCTOR; NPN; 3; 40 V; 600 mA
40V 225mW 100@150mA,10V 600mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
NPN SILICON GENERAL PURPOSE TRANSISTOR Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
TRANSISTOR, NPN, 40V, SOT-23, REEL; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 225mW; DC Collector Current: 600mA; DC Current Gain hFE: 50hFE; Tra
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 600 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 40 / Collector-Base Voltage (Vcbo) V = 75 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) mW = 225 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 2 / Reflow Temperature Max. °C = 260
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +3.87%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)75 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min75
Max Breakdown Voltage40 V
Max Collector Current600 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation225 mW
Schedule B8541210080
Transition Frequency300 MHz
TypeGeneral Purpose
Voltage Rating (DC)40 V
Dimensions
Height1.11 mm
Length2.9 mm
Width1.3 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità