onsemi MMBT2222

40V 300mW 600mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
$ 0.025
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
Verical
2
MMBT222219.37313275
Rochester ElectronicsMMBT222248.883
10h
FarnellMMBT222201Cut Tape
5h
element14 APAC
2
MMBT222201Cut Tape
1d
Win SourceWS-MMBT222236.0005K
11h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi MMBT2222.

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Datasheet9 pagine4 anni fa

IHS

element14 APAC

onsemi

Fairchild Semiconductor

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
onsemiMMBT2222
onsemiMMBT2222ALT1G
onsemiMMBT2222ALT1G
Price @ 1000
$ 0.025
$ 0.036
$ 0.036
Stock
271,220
116,964,625
116,964,625
Authorized Distributors
4
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-23
SOT-23
SOT-23
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
30 V
40 V
40 V
Max Collector Current
500 mA
600 mA
600 mA
Transition Frequency
250 MHz
300 MHz
300 MHz
Collector Emitter Saturation Voltage
1.6 V
300 mV
300 mV
hFE Min
30
75
75
Power Dissipation
350 mW
225 mW
225 mW

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.75
Introduction Date1989-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-06-10
LTD Date2013-12-10

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Descrizioni

Descrizioni di onsemi MMBT2222 fornite dai suoi distributori.

40V 300mW 600mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Dasenic
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 100 @ 150mA 10V 600mA 350mW 250MHz
Fly-Wing Technology
Trans GP BJT NPN 30V 0.6A 3-Pin SOT-23 T/R
Verical
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):100; Package/Case:SOT-323; C-E Breakdown Voltage:30V; DC Collector Current:0.6A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
Newark
TRANSISTOR, NPN, 30V, 0.6A, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:350mW; DC Collector Current:600mA; DC Current Gain hFE:300; Transistor Case Style:SOT-323; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:400mV; Current Ic Continuous a Max:500mA; Current Ic hFE:300mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:100; Package / Case:SOT-323; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:SMD
element14 APAC

Immagini

Farnell
Farnell
Newark
Rochester Electronics
iiiC

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  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd