onsemi HGTP12N60C3D

Trans IGBT Chip N=-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220AB Rail
$ 2.03
Obsolete
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AvnetHGTP12N60C3D800472
4h
Rochester ElectronicsHGTP12N60C3D30
2h
Flip ElectronicsHGTP12N60C3D800
6d
Win SourceWS-HGTP12N60C3D40612
3h
Worldway ElectronicsHGTP12N60C3D95177Tube
2h

Schede tecniche e documenti

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IHS

Fairchild Semiconductor

Future Electronics

onsemi

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-01-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Descrizioni

Descrizioni di onsemi HGTP12N60C3D fornite dai suoi distributori.

Trans IGBT Chip N=-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220AB Rail
Verical
HGTP12N60C3D Series 600 V 24 A Flange Mount UFS N-Channel IGBT-TO-220AB
Future Electronics
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IHS
600V,24A,UFS SERIES NCH IGBT,W/ANTI-PARALLEL HYPERFAST DIODE
Onlinecomponents.com
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49182.
Fairchild Semiconductor

Immagini

TME
element14
iiiC
Future Electronics
Rochester Electronics
Jameco

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