Infineon IRG4BC30KDPBF

Trans IGBT Chip N-CH 600V 28A 100000mW 3-Pin(3+Tab) TO-220AB Tube, TO220COPAK-3, RoHS
$ 6.46
Obsolete
Pagina del produttoreScheda dati

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Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRG4BC30KDPBF.

IHS

Datasheet10 pagine16 anni fa
Datasheet10 pagine16 anni fa
Datasheet11 pagine25 anni fa

Newark

iiiC

RS (Formerly Allied Electronics)

DigiKey

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-01-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-11-04
LTD Date2013-05-04

Parti correlate

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600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode
Trans IGBT Chip N=-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220AB Rail
Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 34A 125W TO220AB
Trans IGBT Chip N=-CH 390V 21A 150000mW Automotive 3-Pin(3+Tab) TO-220AB Tube

Descrizioni

Descrizioni di Infineon IRG4BC30KDPBF fornite dai suoi distributori.

Trans IGBT Chip N-CH 600V 28A 100000mW 3-Pin(3+Tab) TO-220AB Tube, TO220COPAK-3, RoHS
Infineon SCT
IGBT Transistors; INFINEON; IRG4BC30KDPBF; 600 V; Single; 28 A; TO-220AB
IRG4BC30 Series 600 V 16 A N-Channel Ultra Fast IGBT - TO-220AB
600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.7 V Current release time: 160 ns Power dissipation: 100 W
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:28A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:100W; Package/Case:TO-220AB ;RoHS Compliant: Yes
IGBT, TO-220; DC Collector Current: 28A; Collector Emitter Saturation Voltage Vce(on): 2.21V; Power Dissipation Pd: 100W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating T
IGBT, 600V, 28A, TO-220; Transistor Type:IGBT; DC Collector Current:28A; Collector Emitter Voltage Vces:2.21V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:28A; Current Temperature:25°C; Fall Time Max:120ns; Fall Time tf:120ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:58A; Rise Time:42ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFIRG4BC30KDPBF
  • IRG4BC30KD
  • SP001532644