onsemi HGTP3N60A4

Trans IGBT Chip N-CH 600V 17A 70000mW 3-Pin(3+Tab) TO-220AB Rail
$ 1.215
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
Verical
3
HGTP3N60A4104.431248
Rochester ElectronicsHGTP3N60A4106.700
13h
FarnellHGTP3N60A401
1h
Component Stockers USAHGTP3N60A4562
>1wk
Win SourceWS-HGTP3N60A4933060
15h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi HGTP3N60A4.

IHS

Datasheet8 pagine22 anni fa
Datasheet0 pagine0 anni fa

onsemi

Fairchild Semiconductor

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-01-20
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)

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Descrizioni

Descrizioni di onsemi HGTP3N60A4 fornite dai suoi distributori.

Trans IGBT Chip N-CH 600V 17A 70000mW 3-Pin(3+Tab) TO-220AB Rail
Verical
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IHS
IGBT, N, TO-220; Transistor type:IGBT; Voltage, Vces:600V; Current, Ic continuous a max:17A; Voltage, Vce sat max:2.7V; Power dissipation:70W; Case style:TO-220AB; Current, Icm pulsed:40A; Pin format:GCE; Pins, No. of:3; Power, Pd:70W; Power, Ptot:70W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:Through Hole; Time, fall:47ns; Time, rise:11ns; Transistor polarity:N; Transistors, No. of:1; Voltage, Vceo:600V
Farnell
The HGTP3N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
Fairchild Semiconductor

Immagini

Farnell
Rochester Electronics

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