Infineon IRG4BC30FDPBF
$ 6.31
Obsolete
Prezzo e stock
Distributori autorizzati
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Rivenditori non autorizzati
Modelli CAD
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-04-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-08-11
LTD Date2013-02-11
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Descrizioni
Descrizioni di Infineon IRG4BC30FDPBF fornite dai suoi distributori.
IRG4BC30FD Series 600 V 17 A N-Channel Fast CoPack IGBT - TO-220AB
Trans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB
Copacked 600V IGBT in a TO-220AB package with a fast 1-8 kHz soft recovery diode, TO220COPAK-3, RoHS
Infineon SCT
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.59 V Current release time: 160 ns Power dissipation: 100 W
FAST COPACK INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:31A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:100W; Package/Case:TO-220AB ;RoHS Compliant: Yes
IGBT, 600V, 31A, TO-220; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:31A; Current Temperature:25°C; Device Marking:IRG4BC30FDPBF; Fall Time Max:160ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.8 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current31 A
Current Rating31 A
Element ConfigurationSingle
Fall Time230 ns
Max Collector Current31 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity1000
PackagingBulk
Power Dissipation100 W
Reverse Recovery Time42 ns
Rise Time26 ns
TerminationThrough Hole
Turn-Off Delay Time230 ns
Turn-On Delay Time42 ns
Voltage Rating (DC)600 V
Dimensions
Height20.57 mm
Length10.54 mm
Width4.69 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità