onsemi HGTG40N60A4

HGTG40N60A4 Series 600 V 75 A Flange Mount SMPS N-Channel IGBT - TO-247
$ 4.51
Obsolete
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Schede tecniche e documenti

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IHS

Fairchild Semiconductor

Future Electronics

Newark

Cronologia dell'inventario

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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-03-07
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2023-03-30
LTD Date2023-09-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)

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Descrizioni

Descrizioni di onsemi HGTG40N60A4 fornite dai suoi distributori.

HGTG40N60A4 Series 600 V 75 A Flange Mount SMPS N-Channel IGBT - TO-247
Collector Current:75A; Power Dissipation:625W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Msl:- Rohs Compliant: Yes |Onsemi HGTG40N60A4.
IGBT, N TO-247; DC Collector Current: 75A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 625W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating
The HGTG40N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

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  • HGTG40N60A4.