onsemi HGTG30N60A4

Transistor IGBT Chip Negative Channel 600 Volt 75A 3-Pin(3+Tab) TO-247 Rail

HGTG30N60A4 Series 600 V 75 A Flange Mount SMPS N-Channel IGBT-TO-247

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247

IGBT Transistors 600V N-Channel IGBT SMPS Series

Ptpigbt To247 60A 600V Rohs Compliant: Yes

IC REG LINEAR 3.8V 50MA SOT23-5

The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2.6V; Power Dissipation Pd:463W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:75A; Current Temperature:25°C; Device Marking:HGTG30N60A4; Fall Time tf:38ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Format:GCE; Power Dissipation Max:463W; Power Dissipation Pd:463W; Power Dissipation Pd:463W; Power Dissipation Ptot Max:463W; Pulsed Current Icm:240A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V