onsemi FQP45N15V2

Power MOSFET, N-Channel, QFET®, 150 V, 45 A, 40 mΩ, TO-220
$ 1.16
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Master Electronics

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Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-10-13
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descrizioni

Descrizioni di onsemi FQP45N15V2 fornite dai suoi distributori.

Power MOSFET, N-Channel, QFET®, 150 V, 45 A, 40 mΩ, TO-220
Single N-Channel 150 V 0.04 Ohm 94 nC 220 W DMOS Flange Mount Mosfet - TO-220-3
Trans MOSFET N-CH 150V 45A 3-Pin(3+Tab) TO-220AB Rail
150 V N-CHANNEL MOSFET Power Field-Effect Transistor, 45A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Drain Source Voltage Vds:150V; On Resistance Rds(on):34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:220W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:45A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:40mohm; Package / Case:TO-220; Power Dissipation Pd:220W; Power Dissipation Pd:220W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

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  • FQP45N15V2.