Infineon IRFB41N15DPBF
$ 4.94
Obsolete
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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-11-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Parti correlate
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MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;TO-220AB;PD 230W;-55deg
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Descrizioni
Descrizioni di Infineon IRFB41N15DPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.045Ohm;ID 41A;TO-220AB;PD 200W;VGS +/-30V
Single N-Channel 150 V 0.045 Ohm 72 nC HEXFET® Power Mosfet - TO-220-3
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 150V 41A 3-Pin(3+Tab) TO-220AB
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W
Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
MOSFET, N, 150V, 41A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:41A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:164A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)41 A
Current Rating41 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.52 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5.5 V
Number of Elements1
On-State Resistance45 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation200 W
Rds On Max45 mΩ
Recovery Time260 ns
Rise Time63 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5.5 V
Turn-Off Delay Time25 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)150 V
Dimensions
Height8.763 mm
Length10.5156 mm
Width4.69 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità