Infineon IRFB52N15DPBF

MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;TO-220AB;PD 230W;-55deg

Transistor MOSFET Negative Channel 150 Volt 51A 3-Pin(3+Tab) TO-220AB

Single N-Channel 150 V 32 mOhm 89 nC HEXFET® Power Mosfet - TO-220-3

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Power MOSFET, N Channel, 150 V, 60 A, 0.032 ohm, TO-220AB, Through Hole

Trans MOSFET N-CH 150V 51A 3-Pin(3+Tab) TO-220AB

Power Field-Effect Transistor, 60A I(D), 150V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

N Channel Mosfet, 150V, 60A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:60A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRFB52N15DPBF.

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

MOSFET, N, 150V, 60A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:150V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:320W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:60A; Junction to Case Thermal Resistance A:0.47°C/W; On State resistance @ Vgs = 10V:32ohm; Package / Case:TO-220AB; Power Dissipation Pd:320W; Power Dissipation Pd:320W; Pulse Current Idm:240A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V