onsemi FQP13N10

N-Channel Power MOSFET, QFET®, 100 V, 12.8 A, 180 mΩ, TO-220
EOL
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
FarnellFQP13N1001
1d
Component Stockers USAFQP13N10915
14h
Win Source
2
WS-454877340045
1d
Worldway ElectronicsFQP13N1026.2317Tube
23h
RC ElectronicsFQP13N1061.8541
>1wk

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FQP13N10.

Upverter

Technical Drawing1 pagina6 anni fa

Farnell

IHS

Fairchild Semiconductor

onsemi

Modelli CAD

Scarica il simbolo onsemi FQP13N10, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.

FONTEeCADmCADFILE
SnapEDA
Impronta
Scarica
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-09-13
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

Parti correlate

VishayIRF530PBF
Single N-Channel 100 V 0.16 Ohms Flange Mount Power Mosfet - TO-220-3
Dettagli
onsemiFQP13N10L
N-Channel Power MOSFET, Logic Level, QFET®, 100 V, 12.8 A, 180 mΩ, TO-220
Dettagli
InfineonIRF520NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 9.7A;TO-220AB;PD 48W;VGS +/-20V
Dettagli
VishayIRF520PBF
Single N-Channel 100 V 0.27 Ohms Flange Mount Power Mosfet - TO-220-3
Dettagli
InfineonIRF9530NPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;TO-220AB;PD 79W;VGS +/-20V
Dettagli
InfineonIRL520NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;TO-220AB;PD 48W;VGS +/-16V
Dettagli

Descrizioni

Descrizioni di onsemi FQP13N10 fornite dai suoi distributori.

N-Channel Power MOSFET, QFET®, 100 V, 12.8 A, 180 mΩ, TO-220
onsemi
N-Channel 00 V 0.18 Ohm Through Hole Mosfet - TO-220
Future Electronics
Trans MOSFET N-CH 100V 12.8A 3-Pin(3+Tab) TO-220AB Rail
Avnet Japan
Power Field-Effect Transistor, 12.8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET, N-CH, 100V, 12.8A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available
Farnell
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Fairchild Semiconductor

Immagini

TME
Newark
iiiC
Conrad
Future Electronics
Conrad

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • FQP13N10.