Vishay IRF520PBF
$ 0.431
Production
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Cronologia dell'inventario
Tendenza a 3 mesi: -6.71%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-09-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
InfineonIRF520NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 9.7A;TO-220AB;PD 48W;VGS +/-20V
InfineonIRL520NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;TO-220AB;PD 48W;VGS +/-16V
Descrizioni
Descrizioni di Vishay IRF520PBF fornite dai suoi distributori.
Single N-Channel 100 V 0.27 Ohms Flange Mount Power Mosfet - TO-220-3
Trans MOSFET N-CH 100V 9.2A 3-Pin(3+Tab) TO-220AB / MOSFET N-CH 100V 9.2A TO-220AB
Power MOSFET, N Channel, 100 V, 9.2 A, 0.27 ohm, TO-220AB, Through Hole
60W(Tc) 20V 4V@ 250¦ÌA 16nC@ 10 V 1N 100V 270m¦¸@ 5.5A,10V 9.2A 360pF@25V TO-220AB 9.01mm
100V 9.2A 270m´Î@10V5.5A 60W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 100V, 9.2A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.2A; Junction to Case Thermal Resistance A:2.5°C/W; Package / Case:TO-220AB; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:37A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
Vishay ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Vishay può anche essere conosciuto con i seguenti nomi:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Cronologia dell'inventario
Tendenza a 3 mesi: -6.71%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)9.2 A
Current Rating9.2 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance270 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance360 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation40 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs10 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation60 W
Rds On Max270 mΩ
Recovery Time260 ns
Resistance270 mΩ
Rise Time30 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time19 ns
Turn-On Delay Time8.8 ns
Voltage Rating (DC)100 V
Dimensions
Height19.89 mm
Length10.41 mm
Width4.7 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità