Infineon IRF520NPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.2 Ohm; Id 9.7A; TO-220AB; Pd 48W; Vgs +/-20V
$ 0.418
Production
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRF520NPBF.

IHS

Datasheet10 pagine22 anni fa

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 0.418
$ 0.418
Stock
1,644,424
1,644,424
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
9.7 A
9.7 A
Threshold Voltage
4 V
4 V
Rds On Max
200 mΩ
200 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
48 W
48 W
Input Capacitance
330 pF
330 pF

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descrizioni

Descrizioni di Infineon IRF520NPBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 9.7A;TO-220AB;PD 48W;VGS +/-20V
Infineon Technologies N channel HEXFET power MOSFET, 100 V, 9.7 A, TO-220, IRF520NPBF
Single N-Channel 100 V 0.2 Ohm 25 nC HEXFET® Power Mosfet - TO-220-3
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 100 V, 9.5 A, 0.2 ohm, TO-220AB, Through Hole
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:9.7A; Current Temperature:25°C; Device Marking:IRF520N; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:47W; Power Dissipation Pd:47W; Pulse Current Idm:38A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRF520N
  • IRF520NPBF.
  • SP001571310