Infineon IRF9530NPBF
$ 0.388
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Tendenza a 3 mesi: +19.87%
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Schede tecniche e documenti
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Scheda dati ufficiale2 anni fa
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
InfineonIRL530NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 17A;TO-220AB;PD 79W;VGS +/-16V
InfineonIRF530NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 90Milliohms;ID 17A;TO-220AB;PD 70W;gFS 12S
Descrizioni
Descrizioni di Infineon IRF9530NPBF fornite dai suoi distributori.
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;TO-220AB;PD 79W;VGS +/-20V
Single P-Channel 100 V 0.2 Ohm 58 nC HEXFET® Power Mosfet - TO-220-3
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Transistor MOSFET P-Ch. -14A/-100V TO220 IRF 9530N PBF
Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole
Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: P Power dissipation: 79 W
100 Volt 14 Amp Single P-Channel HEXFET Power MOSFET SO Package
HEXFET POWER MOSFET Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
P Channel Mosfet, -100V, 14A, To-220Ab; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:14A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF9530NPBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, P, -100V, -14A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:75W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-14A; Current Temperature:25°C; Device Marking:IRF9530N; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.9°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Pulse Current Idm:52A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +19.87%
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Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)13 A
Current Rating-14 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)-100 V
Dual Supply Voltage-100 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance760 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation75 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance200 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation75 W
Rds On Max200 mΩ
Recovery Time190 ns
Resistance200 mΩ
Rise Time58 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage-4 V
Turn-Off Delay Time45 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-100 V
Dimensions
Height19.8 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per Infineon IRF9530NPBF.
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità