onsemi FQB12P20TM
$ 0.917
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Cronologia dell'inventario
Tendenza a 3 mesi: -66.82%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-10-18
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIRF6215STRLPBF
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.29Ohm;ID -13A;D2Pak;PD 110W;VGS +/-20V
Descrizioni
Descrizioni di onsemi FQB12P20TM fornite dai suoi distributori.
P-Channel Power MOSFET, QFET®, -200 V, -11.5 A, 470 mΩ, D2PAK
Power MOSFET, P Channel, 200 V, 11.5 A, 0.47 ohm, TO-263 (D2PAK), Surface Mount
ON SEMICONDUCTOR - FQB12P20TM - P CHANNEL MOSFET, -200V, -11.5A, D2PAK
QFET 200 V P-CHANNEL MOSFET Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -66.82%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)11.5 A
Current Rating-11.5 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance470 mΩ
Drain to Source Voltage (Vdss)-200 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation120 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
Power Dissipation3.13 W
Rds On Max470 mΩ
Resistance470 mΩ
Rise Time195 ns
Schedule B8541290080
Threshold Voltage-5 V
Turn-Off Delay Time40 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)-200 V
Dimensions
Height5.08 mm
Length10.67 mm
Width9.65 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità