Infineon IRF6215STRLPBF
$ 0.961
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRF6215STRLPBF | 7 | 4h | |||||||||
| RS (Formerly Allied Electronics) | IRF6215STRLPBF | 0 | 800 | Bulk | 18h | |||||||
| Farnell | IRF6215STRLPBF | 0 | 1 | Cut Tape | 4h | |||||||
| Component Stockers USA | IRF6215STRLPBF | 10.353 | >1wk | |||||||||
| Weyland Electronics Group Pte. Ltd. | IRF6215STRLPBF | 1600 | 1 | Tape & Reel | 1d |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Modelli CAD
Scarica il simbolo Infineon IRF6215STRLPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | Scarica | |
 Ultra Librarian | SimboloImpronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-04-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-01-15
LTD Date2024-07-15
Parti correlate
InfineonIRF9530NSTRLPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;D2Pak;PD 79W;VGS +/-20V;-55
InfineonIRF9530NSPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;D2Pak;PD 79W;VGS +/-20V;-55
InfineonIRF9530NSTRRPBF
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Descrizioni
Descrizioni di Infineon IRF6215STRLPBF fornite dai suoi distributori.
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.29Ohm;ID -13A;D2Pak;PD 110W;VGS +/-20V
-150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single P-Channel 150 V 0.58 Ohm 66 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET P-CH 150V 13A 3-Pin (2+Tab) D2PAK T/R
IRF6215STRLPBF,MOSFET, P-CHANN EL, -150V, -13A, 290 MOHM, 44
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
P CHANNEL MOSFET, -150V, 13A D2-PAK; Tra; P CHANNEL MOSFET, -150V, 13A D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):290mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V
Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:110W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRF6215STRLPBF.
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage-150 V
Drain to Source Resistance290 mΩ
Drain to Source Voltage (Vdss)-150 V
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance860 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance290 mΩ
Package Quantity800
Power Dissipation3.8 W
Rds On Max290 mΩ
Resistance290 mΩ
Rise Time36 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time53 ns
Turn-On Delay Time14 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità