onsemi FDS8878
$ 0.235
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: -1.46%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-03-18
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2026-01-01
LTD Date2026-07-01
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Parti correlate
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N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin
InfineonIRF7413ZTRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 8 Milliohms;ID 13A;SO-8;PD 2.5W;VGS +/-20V
Descrizioni
Descrizioni di onsemi FDS8878 fornite dai suoi distributori.
N-Channel 30 V 14 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
N-Channel PowerTrench® MOSFET 30V, 10.2A, 14mΩ
Trans MOSFET N-CH 30V 10.2A 8-Pin SOIC N T/R
Avnet Japan
30V,10.2A,14 OHMS, NCH, POWER TRENCH MOSFET
onsemi NMOS PowerTrench, Vds=30 V, 10.2 A, SOIC, , 8
008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, SMD (S1)<AZ
Power Field-Effect Transistor, 9.3A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, MS-012AA
MOSFETs 30V N-Ch PowerTrench MOSFET
30V 10.2A 14 Os Nch Power Rohs Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 1
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -1.46%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)9.3 A
Current Rating10.2 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance897 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max14 mΩ
Resistance14 MΩ
Rise Time29 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time45 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)30 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità