onsemi FDS8880
$ 0.377
EOL
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Cronologia dell'inventario
Tendenza a 3 mesi: -23.47%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-03-18
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2026-01-01
LTD Date2026-07-01
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
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Descrizioni
Descrizioni di onsemi FDS8880 fornite dai suoi distributori.
TRANSISTOR, SINGLE, N-CHANNEL, POWERTRENCH MOSFET, 30V, 11.6A, SOIC8
N-Channel 30 V 10 mO Surface Mount PowerTrench® Mosfet - SOIC-8
N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ
MOSFET, N CH, 30V, 11.6A, 8SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 11.6A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0079ohm; Available until stocks are exhausted Alternative available
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -23.47%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)11.6 A
Current Rating11.6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.235 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max10 mΩ
Resistance10 MΩ
Rise Time27 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2.5 V
Turn-Off Delay Time38 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)30 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità