onsemi FDS6690A
$ 0.343
NRND
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Cronologia dell'inventario
Tendenza a 3 mesi: -13.02%
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Price @ 1000
$ 0.343
$ 0.268
Stock
1,818,499
89,263
Authorized Distributors
6
3
Mount
Surface Mount
-
Case/Package
SOIC
-
Drain to Source Voltage (Vdss)
30 V
-
Continuous Drain Current (ID)
11 A
11 A
Threshold Voltage
1.9 V
-
Rds On Max
12.5 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
1 W
-
Input Capacitance
1.205 nF
-
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1998-02-01
Lifecycle StatusNRND (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 3 days ago)
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MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 8 Milliohms;ID 13A;SO-8;PD 2.5W;VGS +/-20V
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N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin
Descrizioni
Descrizioni di onsemi FDS6690A fornite dai suoi distributori.
N-Channel Power Trench® MOSFET, Logic Level, 30V, 11A, 12.5mΩ
N-Channel 30 V 12.5 mO Surface Mount PowerTrench Mosfet - SOIC-8
ON SEMICONDUCTOR - FDS6690A - Power MOSFET, N Channel, 30 V, 11 A, 0.0125 ohm, SOIC, Surface Mount
SINGLE N-CHANNEL, LOGIC-LEVEL, POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation P
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -13.02%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance12.5 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.205 nF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation1 W
Rds On Max12.5 mΩ
Resistance12.5 MΩ
Rise Time5 ns
Schedule B8541290080
Threshold Voltage1.9 V
Turn-Off Delay Time28 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)30 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità