Infineon IRF7413ZTRPBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 8 Milliohms; Id 13A; SO-8; Pd 2.5W; Vgs +/-20V
$ 0.241
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRF7413ZTRPBF.

element14 APAC

Datasheet10 pagine18 anni fa

Farnell

RS (Formerly Allied Electronics)

iiiC

DigiKey

Cronologia dell'inventario

Trend di 3 mesi:
-11.10%

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Parti alternative

Price @ 1000
$ 0.241
$ 0.53
$ 0.53
Stock
1,020,697
1,321,972
1,321,972
Authorized Distributors
5
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
SOIC
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
13 A
13 A
13 A
Threshold Voltage
1.8 V
3 V
3 V
Rds On Max
10 mΩ
11 mΩ
11 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
2.5 W
2.5 W
2.5 W
Input Capacitance
1.21 nF
1.8 nF
1.8 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-05-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-09-30
LTD Date2026-03-31

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Descrizioni

Descrizioni di Infineon IRF7413ZTRPBF fornite dai suoi distributori.

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 8 Milliohms;ID 13A;SO-8;PD 2.5W;VGS +/-20V
Single N-Channel 30 V 10 mOhm 9.5 nC HEXFET® Power Mosfet - SOIC-8
HEXFET POWER MOSFET Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Transistor MOSFET N-CH 30V 13A 8-Pin SOIC T/R
Avnet Japan
189W 20V 4.5V@ 760uA 67nC@ 10V 1N 600V 75m¦¸@ 15.1A,10V 33A 2.721nF@ 400V SOIC
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):13mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SO ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 13 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 10 / Gate-Source Voltage V = 20 / Fall Time ns = 3.8 / Rise Time ns = 6.3 / Turn-OFF Delay Time ns = 11 / Turn-ON Delay Time ns = 8.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • 7413ZTRPBF
  • IRF7413ZTRPBF.
  • SP001555342