onsemi FDS86140
$ 1.54
Production
Prezzo e stock
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Cronologia dell'inventario
Tendenza a 3 mesi: -15.03%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDS86140.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-03-14
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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MOSFET, N-CH, 100V, 18.4A, SOIC-8; Transistor Polarity:N Channel; Continuous Dra
Descrizioni
Descrizioni di onsemi FDS86140 fornite dai suoi distributori.
Single N-Channel 100 V 17 mOhm 41 nC 2.5 W PowerTrench SMT Mosfet - SOIC-8
N-Channel PowerTrench® MOSFET 100V, 11.2A, 9.8mΩ
Power Field-Effect Transistor, 11.2A I(D), 100V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
MOSFET, N CH, 100V, 11.2A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0081ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.7V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:50A
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -15.03%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)11.2 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance9.8 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time4.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.58 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2.7 V
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max9.8 mΩ
Rise Time5.6 ns
Schedule B8541290080
Threshold Voltage2.7 V
Turn-Off Delay Time23 ns
Turn-On Delay Time13.7 ns
Dimensions
Height1.75 mm
Length4 mm
Width5 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDS86140.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità