onsemi FDS86106
$ 0.634
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Cronologia dell'inventario
Tendenza a 3 mesi: +46.53%
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-08-06
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descrizioni
Descrizioni di onsemi FDS86106 fornite dai suoi distributori.
Trans MOSFET N-CH 100V 3.4A 8-Pin SOIC T/R / MOSFET N-CH 100V 3.4A 8-SOIC
N-Channel Power Trench® MOSFET 100V, 3.4A, 105mΩ
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
MOSFET, N CH, 100V, 3.4A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.083ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:15A
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +46.53%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)3.4 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance105 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance208 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2.9 V
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max105 mΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage2.9 V
Turn-Off Delay Time8 ns
Turn-On Delay Time5 ns
Dimensions
Height1.75 mm
Length4 mm
Width5 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità