onsemi FDS86141
$ 1.1
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Cronologia dell'inventario
Tendenza a 3 mesi: -6.60%
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-08-11
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIRF7495PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;SO-8;PD 2.5W;VGS +/-20
InfineonIRF7853PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14.4 Milliohms;ID 8.3A;SO-8;PD 2.5W;gFS 11S
VishaySI7852DP-T1-E3
TRANS MOSFET N-CH 80V 7.6A 8-PIN POWERPAK SO T/R | Siliconix / Vishay SI7852DP-T1-E3
Descrizioni
Descrizioni di onsemi FDS86141 fornite dai suoi distributori.
N-Channel Power Trench® MOSFET 100V, 7A, 23mΩ
FDS86141 Series 100 V 7 A 23 mOhm SMT N-Ch PowerTrench® MOSFET - SO-8
MOSFET, N CH, 100V, 7A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:30A
This N-channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench™ process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -6.60%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time3.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance934 pF
Max Operating Temperature150 °C
Max Power Dissipation5 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs3.1 V
Number of Elements1
Power Dissipation5 W
Rds On Max23 mΩ
Rise Time3.2 ns
Schedule B8541290080
Threshold Voltage3.1 V
Turn-Off Delay Time14.3 ns
Turn-On Delay Time8.3 ns
Dimensions
Height1.5 mm
Length4 mm
Width5 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità