onsemi FDS4675-F085
$ 0.932
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Flip Electronics | FDS4675-F085 | 175.000 | 4d | |||||||||
| Avnet | FDS4675-F085 | 0 | 725 | 2d | ||||||||
| Newark | FDS4675_F085 | 0 | 2500 | Tape & Reel | ||||||||
| Farnell | FDS4675-F085 | 0 | 5 | Cut Tape | 7h | |||||||
| Microchip USA | FDS4675-F085 | 188 | 3K | Tray | 4d |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
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1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDS4675-F085.
Modelli CAD
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| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.932
$ 0.405
Stock
1,939,962
1,299,411
Authorized Distributors
4
4
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
-40 V
40 V
Continuous Drain Current (ID)
11 A
10 A
Threshold Voltage
-1.4 V
-
Rds On Max
13 mΩ
15 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.2 W
1.7 W
Input Capacitance
4.35 nF
3 nF
Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-02-16
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2021-12-17
LTD Date2021-12-17
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
Parti correlate
InfineonIRF7821TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7821PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS +/-20V
VishaySI4425DDY-T1-GE3
SI4425DDY Series 30 V 9.8 mOhm 80 nC P-Channel Surface Mount Mosfet - SOIC-8
Descrizioni
Descrizioni di onsemi FDS4675-F085 fornite dai suoi distributori.
In a Pack of 5, P-Channel MOSFET, 11 A, 40 V, 8-Pin SOIC ON Semiconductor FDS4675-F085
Trans MOSFET P-CH 40V 11A Automotive 8-Pin SOIC T/R
P-Channel PowerTrench® MOSFET -40V, -11A, 13mΩ
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 20V).
MOSFET, P CH, -40V, -11A, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.4V; Power Dissipation Pd:1.4W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight230.4 mg
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance13 mΩ
Drain to Source Voltage (Vdss)-40 V
Element ConfigurationSingle
Fall Time96 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.35 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature175 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs-1.4 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation1.2 W
Rds On Max13 mΩ
Rise Time46 ns
Schedule B8541290080
Threshold Voltage-1.4 V
Turn-Off Delay Time100 ns
Turn-On Delay Time40 ns
Dimensions
Height1.75 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDS4675-F085.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità