Infineon IRF7821TRPBF
$ 0.7
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF7821TRPBF | 0 | 20 | Bulk | 10h | |||||||
| Avnet | 40M7974 | 0 | 1 | 2d | ||||||||
| Farnell | IRF7821TRPBF | 0 | 1 | Cut Tape | 17h | |||||||
| Microchip USA | IRF7821TRPBF | 337 | 600 | 11h | ||||||||
| Weyland Electronics Group Pte. Ltd. | IRF7821TRPBF | 4000 | 1 | Tape & Reel | 19h |
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Modelli CAD
Scarica il simbolo Infineon IRF7821TRPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
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Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-02-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
Parti correlate
InfineonIRF7821PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS +/-20V
VishaySI4174DY-T1-GE3
2.5W(Ta),5W(Tc) 20V 2.2V@ 250¦ÌA 27nC@ 10 V 1N 30V 9.5m¦¸@ 10A,10V 17A 985pF@15V SOIC-8 1.75mm
STMicroelectronicsSTS11NF30L
N-Channel 30V - 0.009 Ohm - 11A - SO-8 LOW GATE CHARGE StripFET(TM) II POWER MOSFET
Descrizioni
Descrizioni di Infineon IRF7821TRPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7 Milliohms;ID 13.6A;SO-8;PD 2.5W;VGS +/-20V
Single N-Channel 30 V 9.1 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8
Power MOSFET, N Channel, 30 V, 13.6 A, 0.007 ohm, SOIC, Surface Mount
Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R
Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
N CHANNEL MOSFET, 30V, 13.6A, SOIC; Tran; N CHANNEL MOSFET, 30V, 13.6A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.6A; Drain Source Vol; Available until stocks are exhausted Alternative available
N CHANNEL MOSFET, 30V, 13.6A, SOIC; Tran; N CHANNEL MOSFET, 30V, 13.6A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:13.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; No. of Pins:8
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -100%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)13.6 A
Current Rating13.6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9.1 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time7.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.01 nF
Max Junction Temperature (Tj)155 °C
Max Operating Temperature155 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
On-State Resistance9.1 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max9.1 mΩ
Resistance9.1 MΩ
Rise Time2.7 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time9.7 ns
Turn-On Delay Time6.3 ns
Voltage Rating (DC)30 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità