onsemi FDPF12N60NZ
$ 1.081
Production
Prezzo e stock
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Distributori di stock non autorizzati
Rivenditori non autorizzati
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SKU
Min
Pkg
Prezzi all'ingrosso
Cronologia dell'inventario
Tendenza a 3 mesi: -57.29%
Modelli CAD
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1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDPF12N60NZ.
Modelli CAD
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Questo componente
Parti alternative
Price @ 1000
$ 1.081
$ 1.238
Stock
354,371
123,741
Authorized Distributors
6
2
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
12 A
12 A
Threshold Voltage
-
4 V
Rds On Max
650 mΩ
650 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
39 W
51 W
Input Capacitance
1.676 nF
2.29 nF
Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
STMicroelectronicsSTP14NK60ZFP
STP14NK60ZFP N-channel MOSFET Transistor, 13.5 A, 600 V, 3-Pin TO-220FP
STMicroelectronicsSTF12NK60Z
Power MOSFET, N Channel, 650 V, 10 A, 640 Milliohms, TO-220FP, 3 Pins, Through Hole
Descrizioni
Descrizioni di onsemi FDPF12N60NZ fornite dai suoi distributori.
N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220F
FDPF12N60NZ Series 600 V 12 A 650 mOhm N-Ch PowerTrench® MOSFET - TO-220F
Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -57.29%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance650 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time130 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.676 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation39 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation39 W
Rds On Max650 mΩ
Rise Time110 ns
Schedule B8541290080
Turn-Off Delay Time80 ns
Turn-On Delay Time25 ns
Dimensions
Height19.5 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDPF12N60NZ.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità