onsemi FQPF13N50C
$ 1.027
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: -0.11%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Modelli CAD
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| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-03-05
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
Parti correlate
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STMicroelectronicsSTF13NK50Z
N-channel 500 V, 0.4 Ohm, 11 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package
Descrizioni
Descrizioni di onsemi FQPF13N50C fornite dai suoi distributori.
Power MOSFET, N-Channel, QFET®, 500 V, 13.5 A, 480 mΩ, TO-220F
FQPF13N50C Series 500 V 0.48 Ohm Through Hole N-Channel Mosfet - TO-220F
48W(Tc) 30V 4V@ 250uA 56nC@ 10 V 2N 500V 540m¦¸@ 6.5A,10V 13A 2.055nF@ 25V TO-220F
500V N-CHANNEL MOSFET QFET Power Field-Effect Transistor, 13A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -0.11%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)13 A
Current Rating13 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance480 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.055 nF
Max Operating Temperature150 °C
Max Power Dissipation48 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation48 W
Rds On Max480 mΩ
Resistance480 mΩ
Rise Time100 ns
Turn-Off Delay Time130 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)500 V
Dimensions
Height9.19 mm
Length10.16 mm
Width4.7 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità