onsemi FDP61N20
$ 1.245
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Tendenza a 3 mesi: -17.72%
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-09-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIRFB4227PBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 19.7 Milliohms;ID 65A;TO-220AB;PD 330W
InfineonIRFB38N20DPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.054Ohm;ID 43A;TO-220AB;PD 300W;VGS +/-30V
InfineonIRFB52N15DPBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;TO-220AB;PD 230W;-55deg
Descrizioni
Descrizioni di onsemi FDP61N20 fornite dai suoi distributori.
N-Channel Power MOSFET, UniFETTM, 200V, 61A, 41mΩ, TO-220
Transistor: N-MOSFET; unipolar; 200V; 38.5A; 417W; TO220; UniFET™
MOSFET N-CH 200V 61A TO-220 / Trans MOSFET N-CH 200V 61A 3-Pin(3+Tab) TO-220 Tube
N-Channel 200 V 41 mO 417 W Flange Mount Mosfet - TO-220
Power Field-Effect Transistor, 61A I(D), 200V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:200V; On Resistance Rds(on):41mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:61A; Package / Case:TO-220; Power Dissipation Pd:417W; Power Dissipation Pd:417W; Pulse Current Idm:244A; Repetitive Avalanche Energy Max:41.7mJ; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -17.72%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)61 A
Current61 A
Current Rating61 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance41 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time170 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.38 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation417 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation417 W
Rds On Max41 mΩ
Resistance41 MΩ
Rise Time215 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time125 ns
Turn-On Delay Time40 ns
Voltage200 V
Voltage Rating (DC)200 V
Dimensions
Height20.4 mm
Length10.67 mm
Width4.83 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FDP61N20.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità