onsemi FDP51N25
$ 1.245
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Cronologia dell'inventario
Tendenza a 3 mesi: -9.23%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-09-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIRFB38N20DPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.054Ohm;ID 43A;TO-220AB;PD 300W;VGS +/-30V
Descrizioni
Descrizioni di onsemi FDP51N25 fornite dai suoi distributori.
Transistor MOSFET N Channel 250 Volt 51.6 Amp 3 Pin 3+ Tab TO-220 Rail
N-Channel Power MOSFET, UniFETTM, 250V, 51A, 60mΩ, TO-220
N-Channel 250 V 60 mOhm Flange Mount Mosfet - TO-220
Power Field-Effect Transistor, 51A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 250V, 51A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Po
MOSFET, N, TO-220; Transistor type:MOSFET; Voltage, Vds typ:250V; Current, Id cont:51A; Resistance, Rds on:0.06R; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-220 (SOT-78B); Current, Idm pulse:204A; Energy, avalanche repetitive Ear:32mJ; Power, Pd:320W; Transistor polarity:N; Voltage, Rds measurement:10V; Voltage, Vds max:250V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -9.23%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)51 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time130 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.41 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation320 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation320 W
Rds On Max60 mΩ
Resistance60 MΩ
Rise Time465 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time98 ns
Turn-On Delay Time62 ns
Dimensions
Height20.4 mm
Length10.67 mm
Width4.83 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità