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Cronologia dell'inventario
Tendenza a 3 mesi: Restocked
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-08-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-08-27
LTD Date2013-02-27
Parti correlate
InfineonIPP040N06N3GXKSA1
188W(Tc) 20V 4V@ 90¦ÌA 98nC@ 10 V 1N 60V 4m¦¸@ 90A,10V 11nF@30V TO-220-3 10mm*4.4mm*15.65mm
InfineonIPP034NE7N3GXKSA1
214W 20V 3.1V 88nC@ 10V 1N 75V 3.4m¦¸@ 10V 100A 6.11nF@ 37.5V TO-220 10mm*4.4mm*15.65mm
STMicroelectronicsSTP160N75F3
N-channel 75 V, 3.5 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package
STMicroelectronicsSTP80N70F6
N-channel 68 V, 0.0052 Ohm, 96 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
Descrizioni
Descrizioni di onsemi FDP040N06 fornite dai suoi distributori.
MOSFET N-CH 60V 120A TO220
Power Field-Effect Transistor, 120A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: Restocked
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.235 nF
Max Operating Temperature175 °C
Max Power Dissipation231 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation231 W
Rds On Max4 mΩ
Rise Time40 ns
Turn-Off Delay Time55 ns