STMicroelectronics STP160N75F3
$ 2.08
Obsolete
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STP160N75F3.
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-02-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-11-11
LTD Date2023-05-11
Parti correlate
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214W 20V 3.1V 88nC@ 10V 1N 75V 3.4m¦¸@ 10V 100A 6.11nF@ 37.5V TO-220 10mm*4.4mm*15.65mm
InfineonIPP037N08N3GXKSA1
Power MOSFET, N Channel, 80 V, 100 A, 0.0028 ohm, TO-220, Through Hole
InfineonIPP034N08N5AKSA1
Mosfet, N-Ch, 80V, 175Deg C, 167W Rohs Compliant: Yes |Infineon Technologies IPP034N08N5AKSA1
STMicroelectronicsSTP260N6F6
N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
Descrizioni
Descrizioni di STMicroelectronics STP160N75F3 fornite dai suoi distributori.
N-channel 75 V, 3.5 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package
Transistor MOSFET N-CH 75V 120A 3-Pin (3+Tab) TO-220 Tube
N-Channel 75 V 4 mOhm STripFET Flange Mount Power MosFet - TO-220-3
MOSFET, N CH, 75V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:75V; On Resistance Rds(on):3.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:120A; Package / Case:TO-220; Power Dissipation Pd:330W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Alias del produttore
STMicroelectronics ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. STMicroelectronics può anche essere conosciuto con i seguenti nomi:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Specifiche tecniche
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.75 nF
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation330 W
Rds On Max4 mΩ
Resistance4 MΩ
Rise Time65 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time100 ns
Turn-On Delay Time22 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per STMicroelectronics STP160N75F3.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant