onsemi FDN306P
$ 0.15
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Cronologia dell'inventario
Tendenza a 3 mesi: +180%
Modelli CAD
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2001-09-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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DMN1019 Series 12 V 9.3 A N-Channel Enhancement Mode Mosfet - SC-59-3
Descrizioni
Descrizioni di onsemi FDN306P fornite dai suoi distributori.
P-Channel PowerTrench® MOSFET, 1.8V Specified, -12V, -2.6A, 40mΩ
Trans MOSFET P Channel 12 Volt 2.6A 3-Pin SuperSOT Tape and Reel
P-Channel 12 V 40 mOhm 1.8 V Specified PowerTrench Mosfet SSOT-3
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
MOSFET, P CH, -12V, -2.6A, SUPERSOT; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.6A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +180%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
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Specifiche tecniche
Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.6 A
Current26 A
Current Rating-2.6 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance40 mΩ
Dual Supply Voltage-12 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.138 nF
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Nominal Vgs-600 mV
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max40 mΩ
Resistance40 MΩ
Rise Time10 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-600 mV
Turn-Off Delay Time38 ns
Turn-On Delay Time11 ns
Voltage12 V
Voltage Rating (DC)-12 V
Dimensions
Height940 µm
Length2.92 mm
Width1.4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità