onsemi FDN337N

N-Channel Logic-Level Enhancement Mode Field Effect Transistor 30V, 2.2A, 65mΩ
$ 0.239
Production
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Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
Future Electronics
2
FDN337N213.0003KTape & Reel
Avnet
3
FDN337N63.0003K
3d
Newark
4
FDN337N17.3371Cut Tape
Arrow Electronics
2
FDN337N841
Verical
2
FDN337N246.0003K

Schede tecniche e documenti

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Farnell

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Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descrizioni

Descrizioni di onsemi FDN337N fornite dai suoi distributori.

N-Channel Logic-Level Enhancement Mode Field Effect Transistor 30V, 2.2A, 65mΩ
onsemi
N-Channel 30 V 65 mOhm Surface Mount Field Effect Transistor - SSOT-3
Future Electronics
Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount
EBV Elektronik
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.2A; On Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SuperSOT-3 ;RoHS Compliant: Yes
Newark
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.2 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 70 / Gate-Source Voltage V = 8 / Fall Time ns = 4 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 17 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
Distrelec
SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Fairchild Semiconductor
MOSFET, N, SOT-23; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:2.5A; Resistance, Rds On:0.052ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.7V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:10A; Device Marking:FDN337N; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:0.5W; Power, Pd:0.5W; SMD Marking:337; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:20V; Width, External:3.05mm; Width, Tape:8mm
Farnell

Immagini

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element14 APAC
TME
Distrelec
Newark
Newark
RS
iiiC
Future Electronics
Component Sense
Component Sense
Newark
TME
Component Sense
Rochester Electronics
Conrad
Megastar

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onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

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  • ONS
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  • ON SEMICONDUCTORS
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  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
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  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • FDN 337 N
  • FDN337N.