onsemi FDN304PZ
$ 0.18
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Tendenza a 3 mesi: +5.51%
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2003-05-13
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descrizioni
Descrizioni di onsemi FDN304PZ fornite dai suoi distributori.
P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -2.4A, 52mΩ
Transistor MOSFET P-Channel 20 Volt 2.4A 3-Pin SuperSOT
Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 2.4A SSOT-3
P-Channel 20 V 52 mOhm 1.8 V Specified PowerTrench Mosfet SSOT-3
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
MOSFET, P, SMD, SUPERSOT-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-800mV; Power Dissipation Pd:500mW; Transistor Case Style:SuperSOT; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:-2.4A; Package / Case:SuperSOT-3; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-800mV; Voltage Vgs Rds on Measurement:-4.5V
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -2.4 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 70 / Gate-Source Voltage V = 8 / Fall Time ns = 25 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +5.51%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)2.4 A
Current Rating-2.4 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance52 mΩ
Dual Supply Voltage-20 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.31 nF
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-800 mV
Number of Elements1
Power Dissipation500 mW
Rds On Max52 mΩ
Resistance52 MΩ
Rise Time15 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-800 mV
Turn-Off Delay Time40 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-20 V
Dimensions
Height940 µm
Length2.92 mm
Width1.4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità