onsemi FDD3682
$ 0.546
NRND
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Cronologia dell'inventario
Tendenza a 3 mesi: -83.86%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-06-14
Lifecycle StatusNRND (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 5 years ago)
Parti correlate
STMicroelectronicsSTD15NF10T4
N-Channel 100V - 0.06Ohm - 23A - DPAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
STMicroelectronicsSTD6NF10T4
N-CHANNEL 100V - 0.22 OHM - 6A DPAK LOW GATE CHARGE STripFET MOSFET
STMicroelectronicsSTD10NF10T4
N-channel 100 V, 0.115 Ohm typ., 13 A low gate charge STripFET II Power MOSFET in DPAK package
Descrizioni
Descrizioni di onsemi FDD3682 fornite dai suoi distributori.
N-Channel PowerTrench® MOSFET, 100V, 32A, 0.036 ohm
Power MOSFET, N Channel, 100 V, 32 A, 0.036 ohm, TO-252AA, Surface Mount
Power Field-Effect Transistor, 5.5A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:32A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252AA ;RoHS Compliant: Yes
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -83.86%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)5.5 A
Current Rating32 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance36 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.25 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation95 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation95 W
Rds On Max36 mΩ
Resistance36 MΩ
Rise Time46 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time24 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)100 V
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità