onsemi FDA50N50

Name: onsemi FDA50N50
Brand: onsemi
SKU: FDA50N50

N-Channel Power MOSFET, UniFETTM, 500V, 48A, 105mΩ, TO-3P

Obsolete

Pagina del produttore Scheda dati

Prezzo e stock

Distributori autorizzati

Distributori di stock non autorizzati

Rivenditori non autorizzati

Vedi tutte le interruzioni di prezzo

Distributor	SKU		Min	Pkg
Farnell	FDA50N50	0	1		6,592*	5,258*	4,250*	3,569*	3,569*	1d
Win Source	WS-FDA50N50	197	2			20,833	18,056	18,056	18,056	3h
Worldway Electronics	FDA50N50	14.800	7	Tube		3,369	3,209	3,209	3,209	2h
Aztech	FDA50N50	482			14,430	14,430	14,430	14,430	14,430	23h
AAA CHIPS	FDA50N50	120			8,176	6,708	6,499	6,080	6,080	1d

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1 parte disponibile

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FDA50N50.

Upverter

Datasheet11 pagine6 anni fa

Technical Drawing1 pagina6 anni fa

IHS

Farnell

Future Electronics

onsemi

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Questo componente

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onsemiFDA50N50

STMicroelectronicsSTW45NM50

Price @ 1000

$ 7.007

Stock

131,012

266,654

Authorized Distributors

Mount

Through Hole

Case/Package

TO-247

Drain to Source Voltage (Vdss)

500 V

Continuous Drain Current (ID)

48 A

45 A

Threshold Voltage

5 V

4 V

Rds On Max

105 mΩ

100 mΩ

Gate to Source Voltage (Vgs)

20 V

30 V

Power Dissipation

625 W

390 W

Input Capacitance

6.46 nF

3.7 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-12-14

Lifecycle StatusObsolete (Last Updated: 3 days ago)

LTB Date2022-06-23

LTD Date2022-12-23

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Tube Through Hole N-Channel Single Mosfet Transistor 36A Tc 36A 446W 80ns

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N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220FP package

Dettagli

onsemiFCA36N60NF

Power MOSFET, N-Channel, SUPREMOS®, FRFET®, 600 V, 34.9 A, 95 mΩ, TO-3P

Dettagli

onsemiFCA47N60

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 47 A, 70 mΩ, TO-3P

Dettagli

Descrizioni

Descrizioni di onsemi FDA50N50 fornite dai suoi distributori.

N-Channel Power MOSFET, UniFETTM, 500V, 48A, 105mΩ, TO-3P

onsemi

Trans MOSFET N-CH 500V 48A 3-Pin(3+Tab) TO-3P Tube / MOSFET N-CH 500V 48A TO-3P

Win Source

MOSFET, N-CH, 500V, 48A, TO-3PN-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 48A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.089ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po

Farnell

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor

Immagini

Rochester Electronics

UTSource

iiiC

South Microelectronics

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Modelli CAD

Scarica il simbolo, l'impronta e il 3D STEP

Parti alternative

1 parte disponibile

Specifiche tecniche

Physical

MountThrough Hole

Number of Pins3

Number of Terminals3

Weight6.401 g

Technical

Continuous Drain Current (ID)48 A

Current Rating48 A

Drain to Source Breakdown Voltage500 V

Drain to Source Resistance105 mΩ

Drain to Source Voltage (Vdss)500 V

Element ConfigurationSingle

Fall Time230 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance6.46 nF

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Max Power Dissipation625 W

Min Breakdown Voltage500 V

Min Operating Temperature-55 °C

Number of Channels1

Number of Elements1

Power Dissipation625 W

Rds On Max105 mΩ

Rise Time360 ns

Schedule B8541290080

Threshold Voltage5 V

Turn-Off Delay Time225 ns

Turn-On Delay Time105 ns

Voltage Rating (DC)500 V

Dimensions

Height23.8 mm

Length15.6 mm

Width4.8 mm

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FDA50N50.

Upverter

Datasheet11 pagine6 anni fa

Technical Drawing1 pagina6 anni fa

IHS

Farnell

Future Electronics

onsemi

Conformità

Classificazione ambientale

China RoHSNon-Compliant

Lead FreeLead Free

Radiation HardeningNo

REACH SVHCNo

RoHSCompliant

Dichiarazioni di conformità

Rohs Statement3 pagine5 anni fa

Reach Statement3 pagine12 anni fa

Materials Sheet3 pagine12 anni fa

Reach Statement3 pagine11 anni fa

Materials Sheet3 pagine11 anni fa

Reach Statement8 pagine11 anni fa

Rohs Statement1 pagina12 anni fa

Rohs Statement1 pagina14 anni fa

Reach Statement2 pagine13 anni fa

Rohs StatementN/AN/A