onsemi BC846BPDW1T1G
$ 0.051
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Cronologia dell'inventario
Tendenza a 3 mesi: +10.02%
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-03-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
onsemiBC846BDW1T1G
Bipolar Transistors (BJT); BC846BDW1T1G; ON SEMICONDUCTOR; NPN; 6; 65 V; 100 mA
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Bipolar Transistors (BJT); BC856BDW1T1G; ON SEMICONDUCTOR; PNP; 6; 65 V; 100 mA
onsemiBC856BDW1T3G
ON Semi BC856BDW1T3G Dual PNP Bipolar Transistor; 0.1 A; 65 V; 6-Pin SOT-363
Descrizioni
Descrizioni di onsemi BC846BPDW1T1G fornite dai suoi distributori.
Bipolar Transistor Array, Complementary NPN and PNP, 65 V, 65 V, 100 mA, 100 mA, 380 mW
Bipolar Transistors (BJT); BC846BPDW1T1G; ON SEMICONDUCTOR; NPN, PNP; 6; 65 V; 100 mA
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN and PNP, Silicon
BC846 Series 65 V 100 mA SMT NPN/PNP Complementary Transistor - SOT-363
100 mA 65 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
Trans GP BJT NPN/PNP 65V 0.1A 380mW 6-Pin SC-88 T/R
65V 380mW 200@2mA,5V 100mA 1PCSNPN&1PCSPNP SOT-323-6 Bipolar Transistors - BJT ROHS
600mV@ 5mA, 100mA 1 NPN, 1 PNP 380mW 6V@ NPN, 5V@ PNP 15nA 80V 65V 100mA SOT-363 SMD 2mm × 1.25mm × 1.1mm
Transistors - Bipolar (BJT) - Arrays 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) 1 (Unlimited) Surface Mount NPN, PNP -55°C~150°C TJ 600mV @ 5mA, 100mA 200 @ 2mA 5V 15nA ICBO TRANS NPN/PNP 65V 0.1A SOT363
TRANSISTOR, BIPOL, NPN/PNP, 65V, SOT363; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 65V; Power Dissipation Pd: 380mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
Transistor Npn/Pnp Dual 65V Sot-363, Full Reel; Transistor Polarity:Npn, Pnp; Collector Emitter Voltage Max Npn:65V; Collector Emitter Voltage Max Pnp:65V; Continuous Collector Current Npn:100Ma; Power Dissipation Npn:380Mw Rohs Compliant: Yes |Onsemi BC846BPDW1T1G.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +10.02%
Modelli CAD
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Parti alternative
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Specifiche tecniche
Physical
Case/PackageSOT-363-6
Contact PlatingTin
Number of Pins6
Number of Terminals6
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage65 V
Collector Emitter Saturation Voltage650 mV
Collector Emitter Voltage (VCEO)65 V
Current Rating100 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min200
Max Breakdown Voltage65 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation380 mW
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape and Reel
PolarityNPN, PNP
Power Dissipation380 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)65 V
Dimensions
Height990.6 µm
Length2.1844 mm
Width1.3462 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi BC846BPDW1T1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Dichiarazioni di conformità