onsemi BC846BDW1T1G

Bipolar Transistors (BJT); BC846BDW1T1G; ON SEMICONDUCTOR; NPN; 6; 65 V; 100 mA
$ 0.043
Production
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
Future Electronics
3
BC846BDW1T1G14.889.0003KTape & Reel
Avnet
3
BC846BDW1T1G1.020.0003K
14h
Newark
3
BC846BDW1T1G48481Cut Tape
Master ElectronicsBC846BDW1T1G147.0003K
Onlinecomponents.comBC846BDW1T1G147.0003KBulk

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi BC846BDW1T1G.

Newark

Datasheet11 pagine9 anni fa

IHS

Future Electronics

Farnell

element14 APAC

Cronologia dell'inventario

Trend di 3 mesi:
-4.77%
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Parti alternative

Questo componente
Parti alternative
onsemiBC846BDW1T1G
onsemiBC846BDW1T1
Price @ 1000
$ 0.043
$ 0.025
Stock
63,457,335
391,613
Authorized Distributors
6
1
Mount
-
-
Case/Package
SOT-363-6
SOT-363-6
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
65 V
-
Max Collector Current
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
Collector Emitter Saturation Voltage
600 mV
600 mV
hFE Min
200
200
Power Dissipation
380 mW
-

Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Parti correlate

onsemiBC846BPDW1T1G
Bipolar Transistor Array, Complementary NPN and PNP, 65 V, 65 V, 100 mA, 100 mA, 380 mW
Dettagli
onsemiMUN5215DW1T1G
ON SEMI MUN5215DW1T1G DUAL NPN BIPOLAR TRANSISTOR, 0.1 A, 50 V, 6-PIN SOT-363
Dettagli
onsemiMUN5216DW1T1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Dettagli

Descrizioni

Descrizioni di onsemi BC846BDW1T1G fornite dai suoi distributori.

Bipolar Transistors (BJT); BC846BDW1T1G; ON SEMICONDUCTOR; NPN; 6; 65 V; 100 mA
Maritex
Bipolar Transistor Array, General Purpose, Dual NPN, 65 V, 100 mA, 380 mW
Avnet
ON SEMI BC846BDW1T1G DUAL NPN BIPOLAR TRANSISTOR, 0.1 A, 65 V, 6-PIN SC-88
RS (Formerly Allied Electronics)
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN, Silicon
IHS
BC846BDW1 Series Dual NPN 65 V 100 mA SMT General Purpose Transistor - SOT-363
Future Electronics
65V 380mW 200@2mA,5V 100mA 2 NPN SOT-323-6 Bipolar Transistors - BJT ROHS
Dasenic
General Purpose Transistors Dual NPN Ic=100mA Vceo=65V hfe=200~450 P=380mW SOT363
HQonline
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
North Star Micro
Bipolar Transistor, Npn, Dual, 65V, Sot363, Full Reel; Transistor Polarity:Dual Npn; Collector Emitter Voltage Max Npn:65V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current Npn:100Ma; Power Dissipation Npn:380Mw Rohs Compliant: Yes |Onsemi BC846BDW1T1G.
Newark

Immagini

RS APAC
Augswan
element14
element14 APAC
Farnell
Farnell
Newark
Distrelec
Future Electronics
TME
Rochester Electronics
Electro Sonic

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • BC846BDW1T1G.