onsemi BC856BDW1T1G
$ 0.048
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | BC856BDW1T1G | 165.000 | 3K | Tape & Reel | ||||||||
| Avnet | BC856BDW1T1G | 72.000 | 3K | 2d | ||||||||
| Newark | BC856BDW1T1G | 26.000 | 1 | Cut Tape | ||||||||
| Verical | BC856BDW1T1G | 12.000 | 3K | |||||||||
| Arrow Electronics | BC856BDW1T1G | 2975 | 1 |
Cronologia dell'inventario
Tendenza a 3 mesi: -8.47%
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Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi BC856BDW1T1G.
Modelli CAD
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-01-15
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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Bipolar Transistor Array, Complementary NPN and PNP, 65 V, 65 V, 100 mA, 100 mA, 380 mW
onsemiMUN5116DW1T1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
onsemiMUN5115DW1T1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Descrizioni
Descrizioni di onsemi BC856BDW1T1G fornite dai suoi distributori.
Bipolar Transistors (BJT); BC856BDW1T1G; ON SEMICONDUCTOR; PNP; 6; 65 V; 100 mA
ON SEMI BC856BDW1T1G DUAL PNP BIPOLAR TRANSISTOR, 0.1 A, 65 V, 6-PIN SC-88
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon
Trans GP BJT PNP 65V 0.2A 380mW 6-Pin SC-88 T/R / TRANS 2PNP 65V 0.1A SOT363
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
TRANSISTOR, PNP, -65V, -100MA, SOT-363-6; Transistor Polarity: Dual PNP; Collector Emitter Voltage V(br)ceo: -65V; Power Dissipation Pd: 380mW; DC Collector Current: -100mA; DC Current Gain hFE: 220hFE; Transistor Case Style:
TRANSISTOR, PNP, DUAL, -65V SOT-363, FULL REEL; Transistor Polarity:Dual PNP; Collector Emitter Voltage Max NPN:-; Collector Emitter Voltage Max PNP:-65V; Continuous Collector Current NPN:-; Continuous Collector Current PNP:100mA RoHS Compliant: Yes
Transistor Polarity = PNP / Configuration = Dual / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 65 / DC Current Gain (hFE) = 150 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 380 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 650 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -8.47%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOT-363-6
Contact PlatingTin
Number of Pins6
Number of Terminals6
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage65 V
Collector Emitter Saturation Voltage-650 mV
Collector Emitter Voltage (VCEO)65 V
Current Rating-100 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min220
Max Breakdown Voltage65 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation380 mW
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape and Reel
PolarityPNP
Power Dissipation380 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)-65 V
Dimensions
Height900 µm
Length2 mm
Width1.25 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi BC856BDW1T1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità