NXP Semiconductors MRF6V2010NR1
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Flip Electronics | MRF6V2010NR1 | 2690 | 7d | |||||||||
| RFMW | MRF6V2010NR1 | 0 | 1 | 9m | ||||||||
| Farnell | MRF6V2010NR1 | 0 | 1 | Cut Tape | 23h | |||||||
| Worldway Electronics | MRF6V2010NR1 | 3498 | 7 | Tape & Reel | 23h | |||||||
| IC Components Ltd. | MRF6V2010NR1 | 4351 | 22h |
Cronologia dell'inventario
Tendenza a 3 mesi: -69.31%
Modelli CAD
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Modelli CAD
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date2007-02-26
Lifecycle StatusObsolete (Last Updated: 1 month ago)
Parti correlate
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RF Power Transistor,450 to 1500 MHz, 10 W, Typ Gain in dB is 18 @ 960 MHz, 28 V, LDMOS, SOT1732
NXP SemiconductorsMRFE6S9045NR1
Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 10 W Avg., 28 V
NXP SemiconductorsMRF6S27015NR1
Single W-CDMA Lateral N-Channel RF Power MOSFET, 2300-2700 MHz, 3 W Avg., 28 V
Descrizioni
Descrizioni di NXP Semiconductors MRF6V2010NR1 fornite dai suoi distributori.
RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
NXP Semiconductors SCT
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270AA
TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
Alias del produttore
NXP Semiconductors ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. NXP Semiconductors può anche essere conosciuto con i seguenti nomi:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Cronologia dell'inventario
Tendenza a 3 mesi: -69.31%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-270-2
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight529.540742 mg
Technical
Current Rating10 µA
Drain to Source Breakdown Voltage110 V
Drain to Source Voltage (Vdss)110 V
Element ConfigurationSingle
Frequency220 MHz
Gain22.5 dB
Gate to Source Voltage (Vgs)10 V
Input Capacitance16.3 pF
Max Frequency450 MHz
Max Junction Temperature (Tj)225 °C
Max Operating Temperature225 °C
Max Output Power10 W
Min Breakdown Voltage110 V
Min Operating Temperature-65 °C
Number of Channels1
Number of Elements1
Output Power10 W
Test Current30 mA
Test Voltage50 V
Voltage Rating110 V
Dimensions
Height2.08 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità