Infineon IRLR3636TRLPBF

MOSFET N-CH 60V 50A DPAK / N-Channel 60 V 50A (Tc) 143W (Tc) Surface Mount D-Pak
$ 0.758
Production
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
NewarkIRLR3636TRLPBF8911Cut Tape
Arrow Electronics
2
IRLR3636TRLPBF28791
RutronikLVMOS108015.0003K
3h
DigiKey
2
448-IRLR3636TRLPBFCT-ND1731Cut Tape
Future Electronics
2
IRLR3636TRLPBF03KTape & Reel

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRLR3636TRLPBF.

IHS

Datasheet11 pagine17 anni fa
Datasheet10 pagine17 anni fa

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Questo componente
Parti alternative
InfineonIRLR3636TRLPBF
InfineonIRLR3636TRPBF
InfineonIRLR3636TRPBF
Price @ 1000
$ 0.758
$ 0.753
$ 0.753
Stock
166,251
649,072
649,072
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
50 A
50 A
50 A
Threshold Voltage
-
2.5 V
2.5 V
Rds On Max
6.8 mΩ
6.8 mΩ
6.8 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
16 V
Power Dissipation
143 W
143 W
143 W
Input Capacitance
3.779 nF
3.779 nF
3.779 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-06
Lifecycle StatusProduction (Last Updated: 4 months ago)

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Mosfet, N-Ch, 60V, 59A, To-252 Rohs Compliant: Yes |Diodes Inc. DMTH6009LK3Q-13
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Descrizioni

Descrizioni di Infineon IRLR3636TRLPBF fornite dai suoi distributori.

MOSFET N-CH 60V 50A DPAK / N-Channel 60 V 50A (Tc) 143W (Tc) Surface Mount D-Pak
Win Source
Power MOSFET, N Channel, 60 V, 99 A, 0.0068 ohm, TO-252 (DPAK), Surface Mount
EBV Elektronik
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IHS
N CH POWER MOSFET, HEXFET, 60V, 99A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:99A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V ;RoHS Compliant: Yes
Newark
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Infineon

Immagini

Infineon
RS APAC
LZChips
Rochester Electronics

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Alias del numero di parte

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  • SP001569134