Infineon IRLR2908TRPBF
$ 0.828
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRLR2908TRPBF | 202.000 | 2K | 1d | ||||||||
| Newark | IRLR2908TRPBF | 748 | 1 | Cut Tape | ||||||||
| Future Electronics | IRLR2908TRPBF | 30.000 | 2K | Tape & Reel | ||||||||
| Rutronik | TMOSP12624 | 2000 | 2K | 9h | ||||||||
| DigiKey | IRLR2908TRPBFCT-ND | 717 | 1 | Cut Tape |
Cronologia dell'inventario
Tendenza a 3 mesi: -4.25%
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Questo componente
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Price @ 1000
$ 0.828
$ 2.05
Stock
1,047,959
94,435
Authorized Distributors
6
1
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
80 V
80 V
Continuous Drain Current (ID)
30 A
30 A
Threshold Voltage
2.5 V
-
Rds On Max
28 mΩ
28 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
120 W
120 W
Input Capacitance
1.89 nF
1.89 nF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-02-13
Lifecycle StatusProduction (Last Updated: 5 months ago)
Parti correlate
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N-channel 100 V, 0.02 Ohm typ., 35 A STripFET F7 Power MOSFET in a DPAK package
Descrizioni
Descrizioni di Infineon IRLR2908TRPBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 22.5 Milliohms;ID 39A;D-Pak (TO-252AA);-55de
Trans MOSFET N-CH Si 80V 39A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 80V 30A DPAK
Single N-Channel 80 V 30 mOhm 33 nC HEXFET® Power Mosfet - TO-252AA
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 80 V, 30 A, 0.0225 ohm, TO-252AA, Surface Mount
Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Reel Quantity:2000; Transistor Type:MOSFET ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N CH, 80V, 30A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0225ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V;
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: -4.25%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals1
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.89 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation120 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance28 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation120 W
Rds On Max28 mΩ
Resistance28 MΩ
Rise Time95 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time36 ns
Turn-On Delay Time12 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità