Infineon IRLR2908PBF
$ 1.6
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Modelli CAD
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-02-13
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Parti correlate
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MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 22.5 Milliohms;ID 39A;D-Pak (TO-252AA);-55de
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N-channel 100 V, 0.02 Ohm typ., 35 A STripFET F7 Power MOSFET in a DPAK package
Descrizioni
Descrizioni di Infineon IRLR2908PBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 22.5 Milliohms;ID 39A;D-Pak (TO-252AA);-55de
Single N-Channel 80 V 28 mOhm 22 nC HEXFET® Power Mosfet - TO-252AA
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, 80V, 39A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:80V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:120W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:30A; Junction to Case Thermal Resistance A:1.3°C/W; On State resistance @ Vgs = 10V:28mohm; Package / Case:DPAK; Power Dissipation Pd:120W; Power Dissipation Pd:120W; Pulse Current Idm:150A; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals1
Technical
Continuous Drain Current (ID)30 A
Current Rating30 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)80 V
Dual Supply Voltage80 V
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.89 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation120 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Elements1
On-State Resistance28 mΩ
Package Quantity3000
Power Dissipation120 W
Rds On Max28 mΩ
Resistance28 mΩ
Rise Time95 ns
Threshold Voltage2.5 V
Turn-Off Delay Time36 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)80 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità