Infineon IRFR3518TRPBF
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFR3518TRPBF | 0 | 6K | Bulk | 18h | |||||||
| Weyland Electronics Group Pte. Ltd. | IRFR3518TRPBF | 10.000 | 1 | Tape & Reel | 5h | |||||||
| Win Source | WS-IRFR3518TRPBF | 10.010 | 65 | 5h | ||||||||
| Worldway Electronics | IRFR3518TRPBF | 18.154 | 7 | Tape & Reel | 4h | |||||||
| Aztech | IRFR3518TRPBF | 676 | 1d |
Modelli CAD
Scarica il simbolo Infineon IRFR3518TRPBF, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 EE Concierge | SimboloImpronta |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-09-23
Lifecycle StatusObsolete (Last Updated: 5 months ago)
Parti correlate
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Descrizioni
Descrizioni di Infineon IRFR3518TRPBF fornite dai suoi distributori.
Single N-Channel 80 V 29 mOhm 37 nC HEXFET® Power Mosfet - TO-252AA
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N-CH, 80V, 38A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 38A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)38 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance29 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.71 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance29 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation110 W
Rds On Max29 mΩ
Resistance29 MΩ
Rise Time25 ns
Turn-Off Delay Time37 ns
Turn-On Delay Time12 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità