Infineon IRLR2703PBF
$ 0.337
Obsolete
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Rivenditori non autorizzati
Cronologia dell'inventario
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Price @ 1000
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Stock
149,745
463,747
463,747
Authorized Distributors
3
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
20 A
20 A
20 A
Threshold Voltage
1 V
-
-
Rds On Max
45 mΩ
45 mΩ
45 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
16 V
Power Dissipation
38 W
38 W
38 W
Input Capacitance
450 pF
450 pF
450 pF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Single P-Channel 30 V 10.2 mOhm 59.2 nC 3.4 W Silicon SMT Mosfet - TO-252-3
Descrizioni
Descrizioni di Infineon IRLR2703PBF fornite dai suoi distributori.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.045Ohm;ID 23A;D-Pak (TO-252AA);PD 45W
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
HEXFET Power MOSFET Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, 30V, 22A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:30V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:38W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:23A; Junction to Case Thermal Resistance A:3.3°C/W; On State resistance @ Vgs = 10V:45mohm; Package / Case:DPAK; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulse Current Idm:96A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)20 A
Current Rating23 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance450 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
On-State Resistance45 mΩ
Package Quantity3000
Power Dissipation38 W
Rds On Max45 mΩ
Recovery Time97 ns
Resistance45 mΩ
Rise Time140 ns
Threshold Voltage1 V
Turn-Off Delay Time12 ns
Turn-On Delay Time8.5 ns
Voltage Rating (DC)30 V
Dimensions
Height2.52 mm
Length6.73 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità