Infineon IRLH5030TRPBF

INFINEON IRLH5030TRPBF MOSFET Transistor, N Channel, 100 A, 100 V, 0.0072 ohm, 10 V, 2.5 V
$ 1.15
NRND
Pagina del produttoreScheda dati

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Schede tecniche e documenti

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IHS

Datasheet10 pagine10 anni fa
Datasheet9 pagine10 anni fa

Newark

Farnell

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 1.15
$ 1.764
Stock
475,145
39,681
Authorized Distributors
6
3
Mount
Surface Mount
Surface Mount
Case/Package
QFN
-
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
13 A
13 A
Threshold Voltage
2.5 V
2.5 V
Rds On Max
9 mΩ
9 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
3.6 W
-
Input Capacitance
5.185 nF
5.185 nF

Supply Chain

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-02-08
Lifecycle StatusNRND (Last Updated: 3 months ago)

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Descrizioni

Descrizioni di Infineon IRLH5030TRPBF fornite dai suoi distributori.

INFINEON IRLH5030TRPBF MOSFET Transistor, N Channel, 100 A, 100 V, 0.0072 ohm, 10 V, 2.5 V
Single N-Channel 100 V 9.9 mOhm 44 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
MOSFET, N-Channel, 100V, 100A, 9.0 mOhm max, 44 nC Qg, PQFN, Logic Level
100V Single N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package, PG-TDSON-8, RoHS
Infineon SCT
Power MOSFET, N Channel, 100 V, 100 A, 0.009 ohm, QFN, Surface Mount
Trans MOSFET N-CH 100V 13A 8-Pin PQFN EP T/R
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(on):9.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:3.6W;RoHS Compliant: Yes
MOSFET,N CH,100V,100A,PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:3.6W; Voltage Vgs Max:16V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 88 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 9.9 / Gate-Source Voltage V = 16 / Fall Time ns = 41 / Rise Time ns = 72 / Turn-OFF Delay Time ns = 41 / Turn-ON Delay Time ns = 21 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.6

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFIRLH5030TRPBF
  • IRLH5030
  • IRLH5030TRPBF.
  • SP001558752