Infineon IRFH5006TRPBF

INFINEON IRFH5006TRPBF MOSFET Transistor, N Channel, 21 A, 60 V, 0.0035 ohm, 10 V, 4 VNew
$ 1.177
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IRFH5006TRPBF.

Newark

Datasheet10 pagine11 anni fa

element14 APAC

TME

Farnell

RS (Formerly Allied Electronics)

Cronologia dell'inventario

Trend di 3 mesi:
+56.46%

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Parti alternative

Price @ 1000
$ 1.177
$ 1.12
$ 1.12
Stock
351,545
346,482
346,482
Authorized Distributors
4
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
QFN
-
-
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
21 A
100 A
100 A
Threshold Voltage
2 V
-
-
Rds On Max
4.1 mΩ
3.4 mΩ
3.4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
3.6 W
3.2 W
3.2 W
Input Capacitance
4.175 nF
5.34 nF
5.34 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-03-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-05-15
LTD Date2023-11-15

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MOSFET N-CH 60V 16A 5X6 PQFN / N-Channel 60 V 16A (Ta), 89A (Tc) Surface Mount 8-PQFN (5x6)
100V Single N-Channel HEXFET Power MOSFET in a PQFN package
100V Single N-Channel HEXFET Power MOSFET in a PQFN package
30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package

Descrizioni

Descrizioni di Infineon IRFH5006TRPBF fornite dai suoi distributori.

INFINEON IRFH5006TRPBF MOSFET Transistor, N Channel, 21 A, 60 V, 0.0035 ohm, 10 V, 4 VNew
Single N-Channel 60 V 4.1 mOhm 69 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
Infineon SCT
Trans MOSFET N-CH 60V 21A 8-Pin QFN T/R
MOSFET, N-CH, 60V, 21A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0035ohm; R; Available until stocks are exhausted Alternative available
MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:3.6W
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IRFH5006
  • IRFH5006TRPBF.
  • SP001560332