Infineon IRFH5110TR2PBF
$ 1.59
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFH5110TR2PBF | 0 | 800 | Bulk | 2h | |||||||
| Avnet | IRFH5110TR2PBF | 0 | 400 | 13h | ||||||||
| Microchip USA | IRFH5110TR2PBF | 134 | 150 | Tray | 5h | |||||||
| Win Source | WS-IRFH5110TR2PBF | 60.020 | 35 | 11h | ||||||||
| Worldway Electronics | IRFH5110TR2PBF | 18.132 | 7 | Tape & Reel | 11h |
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-03-18
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
Parti correlate
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100V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6 package, PG-TDSON-8, RoHS
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75V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
InfineonIRFH5206TRPBF
60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
onsemiNTL4502NT1
Non-Compliant Surface Mount 6 ns Contains Lead Tape & Reel (TR) 28 ns 11 mΩ QFN
Descrizioni
Descrizioni di Infineon IRFH5110TR2PBF fornite dai suoi distributori.
100V Single N-Channel HEXFET Power MOSFET in a PQFN package
HEXFET POWER MOSFET Power Field-Effect Transistor, 11A I(D), 100V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET,N CH,100V,11A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:114W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:63A; Power Dissipation Pd:114W; Voltage Vgs Max:20V
Alias del produttore
Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Specifiche tecniche
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance12.4 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time6.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.152 nF
Max Operating Temperature150 °C
Max Power Dissipation114 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Power Dissipation114 W
Rds On Max12.4 mΩ
Recovery Time51 ns
Rise Time9.6 ns
Threshold Voltage4 V
Turn-Off Delay Time22 ns
Turn-On Delay Time7.8 ns
Dimensions
Height838.2 µm
Length5.9944 mm
Width5 mm
Conformità
Classificazione ambientale
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità