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onsemi FDP8860

N-Channel PowerTrench® MOSFET 30V, 80A, 2.5mΩ
$ 1.17
Obsolete
Scheda dati
Pagina del produttore

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Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FDP8860.

IHS

Datasheet6 pagine19 anni fa
Datasheet0 pagine0 anni fa

onsemi

Farnell

element14 APAC

Fairchild Semiconductor

Cronologia dell'inventario

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-09-20
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)

Parti correlate

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MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.4Milliohms;ID 260A;TO-220AB;PD 290W;-55de
InfineonIRLB8743PBF
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
InfineonIRLB8721PBF
Single N-Channel 30 V 8.7 mOhm 13 nC HEXFET® Power Mosfet - TO-220-3
onsemiFDP7030BL
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ
onsemiFDP8896
RAIL/30V,92A,5.9m ohm ,NCH,TO220,POWER TRENCH MOSFET

Descrizioni

Descrizioni di onsemi FDP8860 fornite dai suoi distributori.

N-Channel PowerTrench® MOSFET 30V, 80A, 2.5mΩ
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube
N-Channel 30 V 2.5 mOhm PowerTrench Mosfet - TO-220
Power Field-Effect Transistor, 80A I(D), 30V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
254W(Tc) 20V 2.5V@ 250µA 222nC@ 10V 1individualNChannel 30V 2.5mΩ@ 80A,10V 80A 12.24nF@15V TO-220-3 Through hole mounting 10.67mm*4.7mm*16.3mm
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.0025Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:1.6V; Threshold Voltage Vgs:20V; Msl:- Rohs Compliant: Yes
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on) and fast switching speed.
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:254W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:9200pF; Current Id Max:80A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.59°C/W; On State Resistance Max:2.5mohm; On State Resistance Typ:1.9mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:254W; Power Dissipation Pd:254W; Pulse Current Idm:556A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • FDP8860.